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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10594272 B1

PDFFull Text
Date of Patent:
Mar. 17, 2020

Filed:

Dec. 19, 2017

Gallium nitride power amplifier

Applicant:

Qorvo Us, Inc., Greensboro, NC (US);

Inventors:

Kevin Wesley Kobayashi, Redondo Beach, CA (US);

Dan Denninghoff, Thousand Oaks, CA (US);

Jose Jimenez, Dallas, TX (US);

Assignee:

Qorvo US, Inc., Greensboro, NC (US);

Attorney:

Withrow & Terranova, P.L.L.C.

Primary Examiner:

Khanh V Nguyen

Assistant Examiner:

Khiem D Nguyen

Int. Cl.
CPC ...
H03F 3/68 (2006.01); H03F 1/56 (2006.01); H03F 3/195 (2006.01); H03F 3/213 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H03F 3/60 (2006.01); H01L 27/02 (2006.01); H01L 27/085 (2006.01); H01L 21/8252 (2006.01); H01L 29/417 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H03F 1/56 (2013.01); H01L 21/8252 (2013.01); H01L 27/0207 (2013.01); H01L 27/085 (2013.01); H01L 27/088 (2013.01); H01L 29/402 (2013.01); H01L 29/404 (2013.01); H01L 29/41775 (2013.01); H01L 29/778 (2013.01); H01L 29/78 (2013.01); H03F 3/195 (2013.01); H03F 3/213 (2013.01); H03F 3/604 (2013.01); H01L 29/2003 (2013.01); H01L 29/41725 (2013.01); H03F 2200/192 (2013.01); H03F 2200/204 (2013.01); H03F 2200/222 (2013.01); H03F 2200/318 (2013.01); H03F 2200/387 (2013.01); H03F 2200/411 (2013.01); H03F 2200/451 (2013.01);
Abstract

A gallium nitride (GaN) power amplifier having a plurality of amplifier stages integrated into a monolithic integrated circuit is disclosed. The plurality of amplifier stages is coupled together between a radio frequency signal input and a radio frequency signal output, wherein at least one of the plurality of amplifier stages includes a first GaN transistor that is configured to have a first breakdown voltage that is no more than 75% of a second breakdown voltage of a second GaN transistor included in a different one of the plurality of amplifier stages.

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