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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10593872 B1

PDFFull Text
Date of Patent:
Mar. 17, 2020

Filed:

Sep. 06, 2018

Method of manufacturing semiconductor memory device

Applicants:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;

Inventors:

Yasuyuki Sonoda, Seoul, KR;

Bo Kyoung Jung, Icheon-si, KR;

Assignee:

TOSHIBA MEMORY CORPORATION, Tokyo, JP;

Attorney:

Holtz, Holtz & Volek PC

Primary Examiner:

Vu A Vu

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1659 (2013.01); G11C 11/1675 (2013.01); H01L 27/226 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

According to one embodiment, an insulating layer is formed on a substrate. A hole is formed in the insulating layer. A metal layer is formed in the hole to fill the hole. A surface of the insulating layer and a surface of the metal layer is removed by etching with ion beams having a first angle, which etches both the insulating layer and the metal layer at a first etching rate. A resistance change element is formed on the metal layer.

Find Patent Forward Citations

Sonoda, Yasuyuki. (2020). Method of manufacturing semiconductor memory device (U.S. Patent No. 10593872). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10593872

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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