The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2020

Filed:

Sep. 12, 2015
Applicant:

Board of Regents, the University of Texas System, Austin, TX (US);

Inventors:

Brian A. Korgel, Round Rock, TX (US);

Taylor B. Harvey, Austin, TX (US);

Carl Jackson Stolle, Austin, TX (US);

Vahid Akhavan, Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/0445 (2014.01); H01L 31/0296 (2006.01); H01L 21/02 (2006.01); H01L 31/0352 (2006.01); H01L 31/0224 (2006.01); H01L 31/0232 (2014.01); H01L 31/028 (2006.01); H01L 31/032 (2006.01); H01L 31/18 (2006.01); H01L 31/0256 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0445 (2014.12); H01L 21/02422 (2013.01); H01L 21/02485 (2013.01); H01L 21/02491 (2013.01); H01L 21/02502 (2013.01); H01L 21/02562 (2013.01); H01L 21/02568 (2013.01); H01L 21/02601 (2013.01); H01L 21/02628 (2013.01); H01L 31/028 (2013.01); H01L 31/0296 (2013.01); H01L 31/02327 (2013.01); H01L 31/022425 (2013.01); H01L 31/022466 (2013.01); H01L 31/0322 (2013.01); H01L 31/0326 (2013.01); H01L 31/035209 (2013.01); H01L 31/1864 (2013.01); H01L 2031/0344 (2013.01);
Abstract

Methods of making a semiconductor layer from nanocrystals are disclosed. A film of nanocrystals capped with a ligand can be deposited onto a substrate; and the nanocrystals can be irradiated with one or more pulses of light. The pulsed light can be used to substantially remove the ligands from the nanocrystals and leave the nanocrystals unsintered or sintered, thereby providing a semiconductor layer. Layered structures comprising these semiconductor layers with an electrode are also disclosed. Devices comprising such layered structures are also disclosed.


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