The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Feb. 12, 2018
International Business Machines Corporation, Armonk, NY (US);
Bay Zu Precision Co., Ltd., Tainan, TW;
Shun-Ming Chen, Tainan, TW;
Chien-Chih Huang, Pingtung, TW;
Joel P. Desouza, Putnam Valley, NY (US);
Augustin J. Hong, White Plains, NY (US);
Jeehwan Kim, White Plains, NY (US);
Chien-Yeh Ku, Tainan, TW;
Devendra K. Sadana, Pleasantville, NY (US);
Chuan-Wen Wang, Tainan, TW;
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
BAY ZU PRECISION CO., LTD, Tainan, TW;
Abstract
A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.