The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2020

Filed:

Jan. 12, 2018
Applicant:

Samsung Display Co., Ltd., Yongin-si, Gyeonggi-do, KR;

Inventors:

Jongchan Lee, Yongin-si, KR;

Taehoon Yang, Yongin-si, KR;

Woonghee Jeong, Yongin-si, KR;

Kyoungwon Lee, Yongin-si, KR;

Yongsu Lee, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/02 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41783 (2013.01); H01L 27/127 (2013.01); H01L 27/1222 (2013.01); H01L 27/1251 (2013.01); H01L 29/66575 (2013.01); H01L 29/66696 (2013.01); H01L 29/78675 (2013.01); H01L 29/78678 (2013.01);
Abstract

A display device includes a first insulation layer on a first gate electrode, an active pattern on the first insulation layer and including an NMOS area and a PMOS area, the PMOS area overlapping the first gate electrode, a second insulation layer on the active pattern. The active pattern includes an NMOS area and a PMOS area, with the PMOS area overlapping the first gate electrode. In addition, a second gate electrode is on the second insulation layer and overlaps the NMOS area. An active-protecting pattern is in the same layer as the second gate electrode and passes through the second insulation layer to contact the PMOS area. A third insulation layer is on the active-protecting pattern and the second gate electrode. A data metal electrode passes through the third insulation layer and contacts the active-protecting pattern.


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