Method for forming trench semiconductor device having schottky barrier structure

Abstract

A method for forming a semiconductor device includes providing a region of semiconductor material. The method includes providing a trench structure having a trench extending into the region of semiconductor material from a first major surface, and a conductive material disposed within the trench and separated from the region of semiconductor material by a dielectric region. The method includes providing a Schottky contact region disposed adjacent to the first major surface and adjacent to the trench structure. In one example, providing the Schottky contact region comprises forming a first layer of material consisting essentially of titanium and having a first thickness; forming a second layer of material disposed adjacent to the first layer of material consisting essentially of nickel-platinum and having a second thickness; annealing the first layer of material and the second layer of material; and after the step of annealing, removing any unreacted portions of the first layer of material and the second layer of material. In another example, providing the Schottky contact region comprises providing a layer of material consisting essentially of nickel-chrome.