The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Jun. 28, 2017
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Bruce Lynn Pickelsimer, McKinney, TX (US);
Patrick Robert Smith, Rockwall, TX (US);
Terry James Bordelon, Jr., Flower Mound, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/788 (2006.01); H01L 29/66 (2006.01); H01L 21/225 (2006.01); H01L 21/306 (2006.01); H01L 21/283 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/2253 (2013.01); H01L 21/283 (2013.01); H01L 21/30604 (2013.01); H01L 29/6656 (2013.01); H01L 29/66575 (2013.01); H01L 29/788 (2013.01); H01L 29/7833 (2013.01); H01L 21/26506 (2013.01);
Abstract
An integrated circuit and method has an isolated well with an improved isolated well contact. The well contact diffusion is isolated from a device diffusion of opposite conductivity type within the isolated well by an isolation transistor gate.