The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Aug. 28, 2018
Nxp Usa, Inc., Austin, TX (US);
Ibrahim Khalil, Gilbert, AZ (US);
Charles John Lessard, Gilbert, AZ (US);
Damon G. Holmes, Scottsdale, AZ (US);
Hernan Rueda, Chandler, AZ (US);
NSP USA, Inc., Austin, TX (US);
Abstract
A transistor includes a semiconductor substrate having a first terminal and a gate region, and an interconnect structure formed of multiple layers of dielectric and electrically material on an upper surface of the semiconductor substrate. The electrically conductive material includes first and second layers, the second layer being spaced apart from the first layer by a first dielectric layer of the dielectric material, the first layer residing closest to the upper surface of the semiconductor substrate relative to the second layer. The interconnect structure includes a pillar formed from the conductive material. The pillar is in electrical contact with the first terminal, the pillar extends through the dielectric material, and the pillar includes a pillar segment in the first layer of the conductive material. The interconnect structure also includes a shield structure in the first layer of the conductive material and positioned between the pillar segment and the gate region.