The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Jun. 08, 2016
Applicant:
Nanya Technology Corporation, Taoyuan, TW;
Inventor:
Michael Tristan Andreas, Boise, ID (US);
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); C09K 13/00 (2006.01); H01L 27/108 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32134 (2013.01); C09K 13/00 (2013.01); H01L 27/10852 (2013.01); H01L 28/90 (2013.01);
Abstract
An etching process in a capacitor process for DRAM is described. A substrate is provided, which has thereon a silicon layer and metal electrodes in the silicon layer. The silicon layer is removed using a liquid etchant composition. The liquid etchant composition contains tetramethylammonium hydroxide (TMAH), an additive including hydroxylamine or a metal corrosion inhibitor, and water as a solvent.