The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2020

Filed:

Feb. 27, 2018
Applicant:

Imec Vzw, Leuven, BE;

Inventor:

Frederic Lazzarino, Hamme-Mille, BE;

Assignee:

Imec vzw, Leuven, BE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0273 (2013.01); H01L 21/0332 (2013.01); H01L 21/31116 (2013.01); H01L 21/31127 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01);
Abstract

An example embodiment may include a method for defining patterns for conductive paths in a dielectric layer. The method may include (a) forming a mask layer on the dielectric layer, (b) forming on the mask layer a set of longitudinally and parallel extending mask features, each mask feature including a mandrel having a pair of side wall spacers, the mask features being spaced apart such that gaps are formed between the mask features, (c) depositing an organic spin-on layer covering the set of mask features and filling the gaps, (d) etching a first trench in the organic spin-on layer, the first trench extending across at least a subset of the gaps and exposing the mask layer, and (e) depositing in a spin-on process a planarization layer covering the organic spin-on layer and filling the first trench.


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