The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Jan. 09, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Suk-Soo Pyo, Hwaseong-si, KR;
Hyuntaek Jung, Seoul, KR;
Taejoong Song, Seongnam-si, KR;
Boyoung Seo, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yoengtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A nonvolatile memory device includes a first variable resistance element connected to a first bit line, and a first transmission ;ate connected between the first variable resistance element and a first source line. The first transmission gate includes a first insulating layer formed on a well connected to aground voltage, a first n-channel metal oxide semiconductor (NMOS) transistor formed on the first insulating layer and connected to a first word line, a second insulating layer formed on the well, the second insulating layer being in the same layer as the first insulating layer, and a first p-channel metal oxide semiconductor (PMOS) transistor formed on the second insulating layer and connected to a first write word line.