The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Mar. 07, 2018
Applicant:
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Inventor:
Kazuyo Ishii, Kamakura Kanagawa, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01); G11C 7/18 (2006.01); G11C 8/10 (2006.01);
U.S. Cl.
CPC ...
G11C 5/063 (2013.01); G11C 11/1653 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 13/0023 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0069 (2013.01); G11C 7/18 (2013.01); G11C 8/10 (2013.01);
Abstract
According to one embodiment, a semiconductor storage device comprises a first memory cell including a first resistance change element; a first bit line and a first source line coupled to the first memory cell; and a first resistance coupled to at least one of the first bit line and the first source line.