The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2020

Filed:

Feb. 28, 2017
Applicant:

Purdue Research Foundation, West Lafayette, IN (US);

Inventors:

Abhronil Sengupta, West Lafayette, IN (US);

Zubair Al Azim, West Lafayette, IN (US);

Xuanyao Kelvin Fong, West Lafayette, IN (US);

Kaushik Roy, West Lafayette, IN (US);

Assignee:

Purdue Research Foundation, West Lafayette, IN (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06N 3/04 (2006.01); H01L 43/08 (2006.01); G06N 3/063 (2006.01); G06N 3/08 (2006.01);
U.S. Cl.
CPC ...
G06N 3/049 (2013.01); G06N 3/0635 (2013.01); G06N 3/088 (2013.01); H01L 43/08 (2013.01);
Abstract

An electronic synapse is disclosed, comprising a heavy metal layer having a high spin orbit coupling, a domain wall magnet layer having a bottom surface adjacent to a top surface of the heavy metal layer, the domain wall magnet layer having a perpendicular magnetic anisotropy, the domain wall magnet layer having a domain wall, the domain wall running parallel to a longitudinal axis of the domain wall magnet layer, a pinned layer having perpendicular magnetic anisotropy, and an oxide tunnel barrier connected between the domain wall magnet layer and the pinned layer, wherein the pinned layer, the oxide tunnel barrier, and the free layer form a magnetic tunnel junction.


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