The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2020

Filed:

Oct. 16, 2018
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventor:

Soheil Golara, Costa Mesa, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 1/575 (2006.01); G05F 1/59 (2006.01); G05F 3/22 (2006.01); H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
G05F 1/575 (2013.01); G05F 1/59 (2013.01); H03F 3/45183 (2013.01); H03F 2200/129 (2013.01); H03F 2203/45528 (2013.01);
Abstract

A PMOS-output LDO with full spectrum PSR is disclosed. In one implementation, a LDO includes a pass transistor (M) having a source coupled to an input voltage (Vin); a noise cancelling transistor (M) having a source coupled to the Vin, a gate coupled to a drain and a gate of the pass transistor; a source follower transistor (M) having a source coupled to a drain of the pass transistor, a drain coupled to the drain and gate of the noise cancelling transistor; a current sink coupled between the drain of the source follower transistor and ground; and an error amplifier having an output to drive the gate of the source follower transistor.


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