The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Jul. 28, 2017
Applicant:
Promerus, Llc, Brecksville, OH (US);
Inventors:
Brian Knapp, Brecksville, OH (US);
Cheryl Burns, Brecksville, OH (US);
Assignee:
PROMERUS, LLC, Brecksville, OH (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/023 (2006.01); G03F 7/40 (2006.01); C08F 232/08 (2006.01); C08F 234/02 (2006.01); G03F 7/022 (2006.01); G03F 7/039 (2006.01); G03F 7/075 (2006.01); C09D 145/00 (2006.01); G03F 7/004 (2006.01); G03F 7/038 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); H01L 21/027 (2006.01); G03F 7/16 (2006.01); G03F 7/38 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0226 (2013.01); C08F 232/08 (2013.01); C08F 234/02 (2013.01); C09D 145/00 (2013.01); G03F 7/0045 (2013.01); G03F 7/0046 (2013.01); G03F 7/0233 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/0395 (2013.01); G03F 7/0755 (2013.01); G03F 7/0757 (2013.01); G03F 7/2004 (2013.01); G03F 7/322 (2013.01); G03F 7/40 (2013.01); H01L 21/0274 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/38 (2013.01);
Abstract
Various vinyl addition polymers of nadic anhydride are disclosed. Examples of such polymers include copolymers and terpolymers of nadic anhydride with a wide variety of norbornene-type monomers. The nadic anhydride polymers are found to be useful in forming a wide variety of photosensitive compositions, both positive and negative, which are capable of forming high resolution imagable films exhibiting excellent dielectric properties (low-k) and thermal properties, and thus are useful in the fabrication of a variety of microelectronic and optoelectronic devices, among others.