The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Dec. 20, 2017
National Chung-shan Institute of Science and Technology, Taoyuan, TW;
Shih-Hao Chan, New Taipei, TW;
Shiang-Feng Tang, Taoyuan, TW;
Shao-Ze Tseng, Kaohsiung, TW;
Kun-Chi Lo, Taoyuan, TW;
Sheng-Hui Chen, Hsinchu, TW;
Wen-Jen Lin, Taoyuan, TW;
National Chung-Shan Institute of Science and Technology, Taoyuan, TW;
Abstract
An infrared anti-reflection film structure, an anti-reflection film layer, including a material of zinc oxide, comprising a top anti-reflection film layer and a bottom anti-reflection film layer, wherein the top anti-reflection film layer is disposed on a top side of the base material and the bottom anti-reflection film layer is disposed on a bottom side of the base material; and the base material is manufactured by a floating zone crystal growth method. Through the silicon base material manufactured by the high purity crystal growth method, the silicon base material replaces germanium as the high refractive index material and base material. And coating the anti-reflection film layer on the surface of the silicon base material, so as to apply the infrared anti-reflection film structure to the thermal imaging technology.