The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
May. 08, 2018
Mitsubishi Electric Corporation, Tokyo, JP;
Eiji Yoshikawa, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
Provided is a semiconductor pressure sensor that can maintain high reliability and measure pressure with high accuracy without increasing the size thereof and that has hydrogen permeation prevention performance. The semiconductor pressure sensor includes: a first semiconductor substrate having a recess formed thereon; a second semiconductor substrate joined to the first semiconductor substrate with an oxide film interposed therebetween; a reference pressure chamber formed as a space surrounded by the recess of the first semiconductor substrate and the second semiconductor substrate; a piezoresistor formed on a surface of the second semiconductor substrate that receives pressure, along an outer periphery of the reference pressure chamber; and a protective film formed on the surface of the second semiconductor substrate that receives pressure, and side surfaces of the second semiconductor substrate and the oxide film.