The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Oct. 11, 2018
Applicant:
Imam Abdulrahman Bin Faisal University, Dammam, SA;
Inventor:
Muhammad Nawaz, Dammam, SA;
Assignee:
Imam Abdulrahman Bin Faisal University, Dammam, SA;
Primary Examiner:
Int. Cl.
CPC ...
B01J 23/22 (2006.01); B01J 35/00 (2006.01); B01J 35/10 (2006.01); C01G 35/00 (2006.01);
U.S. Cl.
CPC ...
B01J 23/22 (2013.01); B01J 35/004 (2013.01); B01J 35/0013 (2013.01); B01J 35/0033 (2013.01); B01J 35/1014 (2013.01); B01J 35/1038 (2013.01); B01J 35/1061 (2013.01); C01G 35/00 (2013.01); C01P 2002/72 (2013.01); C01P 2002/84 (2013.01); C01P 2002/85 (2013.01); C01P 2004/03 (2013.01); C01P 2004/16 (2013.01); C01P 2004/54 (2013.01); C01P 2006/12 (2013.01); C01P 2006/14 (2013.01); C01P 2006/16 (2013.01); C01P 2006/40 (2013.01);
Abstract
Tantalum vanadate (TaVO) forms into nanostructures, particularly nanorods, which may range in length between 100 and 600 nm with a length:width ratio between 20:1 to 50:1, and, as a bulk material, have a bandgap of 1.5 to 3.00 eV. Such nanostructures may be prepared by the hydrothermal method.