The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2020
Filed:
Jul. 29, 2016
Teledyne E2v Semiconductors Sas, Saint Egreve, FR;
Frédéric Mayer, Voiron, FR;
Frédéric Barbier, Fontanil-Cornillon, FR;
Stéphane Gesset, Saint Laurent du Pont, FR;
TELEDYNE E2V SEMICONDUCTORS SAS, Saint Egreve, FR;
Abstract
In a sensor comprising active pixels including a photodiode PHD, a memory node MN and a read-out node SN, the memory node being provided to hold the charge generated by the photodiode at the end of an integration period enabling integration in global-shutter mode and a correlated double sampling read-out, provision is made for the charge-storage capacity of the memory node to be at least N times higher than the charge-storage capacity of the photodiode (N being an integer higher than or equal to 2) and provision is made to carry out, in each integration and read-out cycle, during the integration duration Tint(i), N transfers Tri, Tri, Triof charge from the photodiode to the memory node, the N transfers being equally distributed over the integration duration. The dynamic range of the sensor is improved under high light levels.