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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10587263 B1

PDFFull Text
Date of Patent:
Mar. 10, 2020

Filed:

Nov. 06, 2017

Load drive apparatus

Applicant:

Hitachi Automotive Systems, Ltd., Ibaraki, JP;

Inventors:

Takahiro Kawata, Hitachinaka, JP;

Yoichiro Kobayashi, Hitachinaka, JP;

Mitsuhiko Watanabe, Hitachinaka, JP;

Assignee:

Hitachi Automotive Systems, Ltd., Hitachinaka-shi, JP;

Attorney:

Volpe and Koenig, P.C.

Primary Examiner:

Long Nguyen

Int. Cl.
CPC ...
H01L 25/00 (2006.01); H03K 17/687 (2006.01); G01R 31/26 (2020.01); H01L 27/12 (2006.01); H02M 7/48 (2007.01); H01L 21/76 (2006.01); H01L 27/04 (2006.01); H01L 21/762 (2006.01); H01L 21/822 (2006.01); H02P 25/04 (2006.01); H02P 27/06 (2006.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); G01R 31/26 (2013.01); G01R 31/2621 (2013.01); H01L 21/76 (2013.01); H01L 21/762 (2013.01); H01L 21/822 (2013.01); H01L 27/04 (2013.01); H01L 27/1203 (2013.01); H02M 7/48 (2013.01); H02P 25/04 (2013.01); H02P 27/06 (2013.01);
Abstract

Provided are a load drive apparatus in which a semiconductor chip using DTI for inter-element separation is mounted, the load drive apparatus being capable of diagnosing a dielectric strength voltage of the DTI and highly reliable and a failure diagnosis method of the load drive apparatus. There is provided a load drive apparatus in which a semiconductor chip is mounted. The semiconductor chip includes a load drive output unit formed on a semiconductor substrate. The load drive output unit has a first region where an MOSFET that controls load driving is formed and a second region insulated and separated by DTI from the first region and includes a first leakage current detection element provided in the first region, a second leakage current detection element provided in the second region, and a failure detection unit that determines a failure of the load drive output unit.

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