The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2020

Filed:

Jun. 19, 2019
Applicant:

Delta Electronics, Inc., Taoyuan, Taiwan, CN;

Inventors:

Jianping Ying, Taoyuan, CN;

Ming Wang, Taoyuan, CN;

Xiaobo Huang, Taoyuan, CN;

Jun Liu, Taoyuan, CN;

Zhiming Hu, Taoyuan, CN;

Assignee:

Delta Electronics, Inc., Taoyuan, Taiwan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/082 (2006.01); H03K 17/61 (2006.01); H03K 17/567 (2006.01);
U.S. Cl.
CPC ...
H03K 17/0828 (2013.01); H03K 17/567 (2013.01); H03K 17/61 (2013.01);
Abstract

A drive circuit of a power semiconductor switch includes: a pulse modulation circuit having a first terminal configured to receive a fault signal, an isolation transformer, and a pulse demodulation circuit; when there is no fault signal being received, the pulse modulation circuit outputs a first turn on pulse signal and a first turn off pulse signal via the isolation transformer and the pulse demodulation circuit to charge/discharge a gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned on and turned off at a first speed; when the fault signal is received, the pulse modulation circuit outputs a second turn off pulse signal via the isolation transformer and the pulse demodulation circuit to discharge the gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned off at a second speed.


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