The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2020
Filed:
Dec. 21, 2016
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Isorg, Grenoble, FR;
Trixell, Moirans, FR;
Mohammed Benwadih, Champagny sur Marne, FR;
Simon Charlot, Montferrat, FR;
Jean-Yves Laurent, Domene, FR;
Jean-Marie Verilhac, Coublevie, FR;
Emeline Berthod, Grenoble, FR;
Pierre Rohr, Moirans, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
ISORG, Grenoble, FR;
TRIXELL, Moirans, FR;
Abstract
An optoelectronic device includes a stack of layers that are arranged on an electrically insulating substrate, including at least one cathode made of a material of work function Φ; one electron-collecting layer that is arranged above the cathode and that is made of a material of work function φand of sheet resistance R; and one active layer comprising at least one p-type organic semiconductor the energy level of which is HO1, wherein the work function φof the electron-collecting layer and the energy level HO1 of the active layer form a potential barrier able to block the injection of holes from the cathode into the active layer; and the sheet resistance R of the electron-collecting layer is higher than or equal to 10Ω.