The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2020
Filed:
Mar. 30, 2018
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventor:
Defeng Mao, Beijing, CN;
Assignee:
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01); H01L 27/12 (2006.01); H01L 51/00 (2006.01); H01L 51/10 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0558 (2013.01); H01L 27/1222 (2013.01); H01L 27/1229 (2013.01); H01L 27/1237 (2013.01); H01L 27/1251 (2013.01); H01L 51/0048 (2013.01); H01L 51/0541 (2013.01); H01L 51/107 (2013.01);
Abstract
The present application provides a thin film transistor, a method for fabricating the same, a method for driving the same, and a display device. The thin film transistor includes a gate pattern, a gate insulation layer, an active layer pattern, a source/drain pattern, and a passivation layer. The active layer pattern is made of a carbon nanotube material, and the passivation layer is made of a charge-resistant material capable of reducing mobile charges on a surface of the carbon nanotube material.