logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10586893 B1

PDFFull Text
Date of Patent:
Mar. 10, 2020

Filed:

Mar. 16, 2018

Light emitting diode having decreased effective area of active layer, and manufacturing method thereof

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jin-mo Kang, Suwon-si, KR;

Ji-Hoon Kang, Seoul, KR;

Seong-woo Cho, Yongin-si, KR;

Ji-young Kang, Anyang-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Shahed Ahmed

Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/14 (2010.01); H01L 33/20 (2010.01); H01L 33/44 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); H01L 33/007 (2013.01); H01L 33/14 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/40 (2013.01); H01L 33/44 (2013.01); H01L 33/06 (2013.01); H01L 33/42 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A method of manufacturing a light emitting diode (LED) is provided. The method includes forming an n-type semiconductor layer on a substrate, forming an n-type electrode in a first region of the n-type semiconductor layer, forming an active layer in a second region of the n-type semiconductor layer, the second region being a region other than the first region, forming a p-type semiconductor layer on the active layer, and forming a resistance layer by etching regions of the active layer and the p-type semiconductor layer.

Find Patent Forward Citations

Quick Actions:

Kang, Jin-mo. (2020). Light emitting diode having decreased effective area of active layer, and manufacturing method thereof (U.S. Patent No. 10586893). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10586893

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…