The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2020

Filed:

Jun. 18, 2018
Applicant:

Alta Devices, Inc., Sunnyvale, CA (US);

Inventors:

Nikhil Jain, Sunnyvale, CA (US);

Brendan M. Kayes, Los Gatos, CA (US);

Gang He, Cupertino, CA (US);

Assignee:

ALTA DEVICES, INC., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/18 (2006.01); H01L 31/0687 (2012.01); H01L 31/0725 (2012.01); H01L 31/0735 (2012.01); H01L 31/0216 (2014.01); H01L 33/00 (2010.01); H01L 33/04 (2010.01); H01L 31/0232 (2014.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1848 (2013.01); H01L 31/02168 (2013.01); H01L 31/02327 (2013.01); H01L 31/0687 (2013.01); H01L 31/0725 (2013.01); H01L 31/0735 (2013.01); H01L 33/007 (2013.01); H01L 33/04 (2013.01); H01L 21/02304 (2013.01);
Abstract

A multi-junction optoelectronic device and method of fabrication are disclosed. In an aspect, the method includes forming a first p-n structure on a substrate, the first p-n structure including a semiconductor having a lattice constant that matches a lattice constant of the substrate; forming one or more additional p-n structures on the first p-n structure, each of the one or more additional p-n structures including a semiconductor having a lattice constant that matches the lattice constant of the substrate, the semiconductor of a last of the one or more additional p-n structures that is formed including a dilute nitride, and the multi-junction optoelectronic device including the first p-n structure and the one or more additional p-n structures; and separating the multi-junction optoelectronic device from the substrate. In some implementations, it is possible to have the dilute nitride followed by a group IV p-n structure.


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