The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2020

Filed:

Oct. 21, 2015
Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, Tokyo, JP;

Inventors:

Hiroaki Morikawa, Tokyo, JP;

Hirohisa Nishino, Tokyo, JP;

Yukiko Nakazawa, Tokyo, JP;

Atsuro Hama, Tokyo, JP;

Yuichiro Hosokawa, Tokyo, JP;

Assignee:

MITSUBISHI ELECTRIC CORPORATION, Chiyoda-Ku, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/30 (2006.01); H01L 31/0216 (2014.01); H01L 21/66 (2006.01); H01L 31/18 (2006.01); G01N 21/88 (2006.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/02168 (2013.01); G01N 21/8806 (2013.01); H01L 22/10 (2013.01); H01L 31/022425 (2013.01); H01L 31/068 (2013.01); H01L 31/1804 (2013.01); H01L 31/1876 (2013.01); Y02E 10/50 (2013.01); Y02P 70/521 (2015.11);
Abstract

A solar cell manufacturing method includes a step of forming a diffusion layer including a first section and a second section on a light-receiving side of a semiconductor substrate, where the first section has a first concentration of impurities, and the second section has a second concentration of the impurities that is higher than the first concentration, a step of irradiating the diffusion layer with detection light that is reflected at a higher reflectivity on the first section than on the second section, and a step of detecting the first section that corresponds to a first reflectivity, and the second section that corresponds to a second reflectivity that is lower than the first reflectivity in the diffusion layer on the basis of a difference in reflectivity of the detection light reflected off the respective sections of the diffusion layer.


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