The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2020

Filed:

Oct. 19, 2018
Applicants:

Hyundai Motor Company, Seoul, KR;

Kia Motors Corporation, Seoul, KR;

Inventors:

Dae Hwan Chun, Gwangmyeong-si, KR;

NackYong Joo, Hanam-si, KR;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/02634 (2013.01); H01L 21/046 (2013.01); H01L 21/0475 (2013.01); H01L 21/0485 (2013.01); H01L 21/0495 (2013.01); H01L 29/0684 (2013.01); H01L 29/1608 (2013.01); H01L 29/36 (2013.01); H01L 29/417 (2013.01); H01L 29/6606 (2013.01); H01L 29/66143 (2013.01);
Abstract

A semiconductor device may include: an n type of layer disposed on a first surface of a substrate; a p+ type of region disposed on the first surface of the substrate; a p− type of region disposed at a top portion of the n type of layer; a first electrode disposed on the p+ type of region and the p− type of region; and a second electrode disposed on a second surface of the substrate, wherein the side surface of the p+ type of region and the side surface of the n type of layer are in contact, and the thickness of the p+ type of region is the same as the thickness of the n type of layer and the thickness of the p− type of region.


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