The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2020
Filed:
Aug. 30, 2018
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Smic New Technology Research and Development (Shanghai) Corporation, Shanghai, CN;
Qing Peng Wang, Shanghai, CN;
Abstract
A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a semiconductor substrate including a dense region and a sparse region. The method also includes forming initial fins equally spaced apart from one another on the semiconductor substrate, the initial fins including a plurality of intrinsic fins and dummy fins. The intrinsic fins on the dense region has a spatial density greater than the intrinsic fins on the sparse region. In addition, the method includes forming a first isolation layer on the semiconductor substrate. The first isolation layer covers a portion of sidewalls of the dummy fins and a portion of sidewalls of the intrinsic fins. Further, the method includes forming first trenches in the first isolation layer by removing the dummy fins, and forming a second isolation layer in the first trenches.