The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2020
Filed:
Jan. 22, 2019
Opto Tech Corporation, Hsinchu, TW;
OPTO TECH CORPORATION, Hsinchu, TW;
Abstract
A light emitting diode memory includes a substrate, a tunneling structure, a current spreading layer, a first electrode layer and a second electrode layer. The tunneling structure is formed on the substrate. The tunneling structure includes first, second and third material layers. The current spreading layer is formed on the tunneling structure. The first electrode layer is formed on the substrate. The second electrode layer is formed on the current spreading layer. When a bias voltage applied to the first electrode layer and the second electrode layer is higher than a reset voltage, the light emitting diode memory is in a reset state. When the bias voltage is lower than a set voltage, the light emitting diode memory is in a set state. When the bias voltage is higher than a turn-on voltage, the light emitting diode memory emits a light beam.