The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2020

Filed:

Dec. 29, 2017
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Keiji Mabuchi, Kanagawa, JP;

Shunichi Urasaki, Kanagawa, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/00 (2006.01); H04N 5/335 (2011.01); H04N 5/369 (2011.01); H04N 5/3745 (2011.01); H04N 5/374 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 24/14 (2013.01); H01L 24/17 (2013.01); H01L 27/1464 (2013.01); H01L 27/14612 (2013.01); H01L 27/14634 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H04N 5/335 (2013.01); H04N 5/374 (2013.01); H04N 5/379 (2018.08); H04N 5/3745 (2013.01); H04N 5/37457 (2013.01); H01L 2224/0554 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05599 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01059 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/12043 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup devicein which micro padsare formed on the wiring layer side and a signal processing chiphaving micro padsformed on the wiring layer at the positions corresponding to the micro padsof the MOS solid-state image pickup deviceare connected by micro bumps. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.


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