The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2020

Filed:

Oct. 27, 2016
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Toru Takayama, Kanagawa, JP;

Junya Maruyama, Kanagawa, JP;

Mayumi Mizukami, Tokyo, JP;

Shunpei Yamazaki, Tokyo, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/20 (2006.01); H01L 21/762 (2006.01); H01L 33/44 (2010.01); G02F 1/1362 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); G02F 1/136 (2006.01); G02F 1/1339 (2006.01); G02F 1/1341 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1266 (2013.01); G02F 1/1362 (2013.01); H01L 21/2007 (2013.01); H01L 21/76251 (2013.01); H01L 27/1214 (2013.01); H01L 27/1218 (2013.01); H01L 27/1248 (2013.01); H01L 29/24 (2013.01); H01L 29/7869 (2013.01); H01L 33/44 (2013.01); G02F 1/1339 (2013.01); G02F 1/1341 (2013.01); G02F 2001/13613 (2013.01); H01L 27/3262 (2013.01); H01L 2227/326 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layeris provided on the substrate, and further, the oxide layerbeing contact with the foregoing metal layer or nitride layeris provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layerby the physical means.


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