The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2020
Filed:
Jun. 08, 2018
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 21/84 (2006.01); H01L 21/324 (2006.01); H01L 21/268 (2006.01); H01L 21/763 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 21/02381 (2013.01); H01L 21/02675 (2013.01); H01L 21/2686 (2013.01); H01L 21/324 (2013.01); H01L 21/763 (2013.01); H01L 21/76264 (2013.01); H01L 21/84 (2013.01); H01L 29/0607 (2013.01);
Abstract
A semiconductor on insulator type substrate, comprising at least: in which the trap rich layer comprises at least one first region and at least one second region adjacent to each other in the plane of the trap rich layer, the material of the at least one first region being in an at least partially recrystallized state and having an electrical resistivity less than that of the material in the at least one second region.