The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2020
Filed:
Nov. 14, 2017
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Tomas Manuel Reiter, Munich, DE;
Frank Wolter, Munich, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/739 (2006.01); H01L 21/66 (2006.01); H01L 21/77 (2017.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0664 (2013.01); H01L 21/77 (2013.01); H01L 22/12 (2013.01); H01L 22/14 (2013.01); H01L 29/41708 (2013.01); H01L 29/7395 (2013.01);
Abstract
A semiconductor device includes a plurality of forward conducting insulated-gate bipolar transistor cells configured to conduct a current in a forward operating mode of the semiconductor device and to block a current in a reverse operating mode of the semiconductor device. The semiconductor device also includes a plurality of reverse conducting insulated-gate bipolar transistor cells configured to conduct a current both in the forward operating mode and in the reverse operating mode. A corresponding method for operating a semiconductor device is also disclosed.