The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2020

Filed:

Jul. 13, 2018
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Qingjie Ma, Shanghai, CN;

Wei Xu, Jiangsu, CN;

Jingwei Xu, Plano, TX (US);

Yang Wang, Shanghai, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/0812 (2006.01); H01L 27/02 (2006.01); H03K 17/081 (2006.01); H03K 17/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0277 (2013.01); H03K 17/08104 (2013.01); H03K 17/08122 (2013.01); H03K 2017/0806 (2013.01);
Abstract

In a described example, an apparatus includes: a first metal oxide semiconductor field effect transistor (MOSFET) coupled between a first input terminal for receiving a supply voltage and an output terminal for coupling to a load, and having a first gate terminal; an enable terminal coupled to the first gate terminal for receiving an enable signal; a first current mirror coupled between the first input terminal and a first terminal of a first series resistor and having an input coupled to the first gate terminal; and a second MOSFET coupled between the first gate terminal and the output terminal, and having a second gate terminal coupled to the first terminal of the first series resistor, the first series resistor having a second terminal coupled to the output terminal.


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