The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2020

Filed:

Nov. 01, 2016
Applicants:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Soitec, Bernin, FR;

Inventors:

Hubert Moriceau, Saint-Egreve, FR;

Bruno Imbert, Grenoble, FR;

Xavier Blot, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/762 (2006.01); H01L 21/18 (2006.01); H01L 21/20 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); H01L 21/187 (2013.01); H01L 21/2007 (2013.01); H01L 21/76251 (2013.01); H01L 33/0079 (2013.01); H01L 2224/83894 (2013.01); H01L 2224/83935 (2013.01); H01L 2924/1032 (2013.01);
Abstract

A manufacturing method including supplying a first substrate including a first face designated front face, the front face being made of a III-V type semiconductor, supplying a second substrate, forming a radical oxide layer on the front face of the first substrate by executing a radical oxidation, assembling, by a step of direct bonding, the first substrate and the second substrate so as to form an assembly including the radical oxide layer intercalated between the first and second substrates, executing a heat treatment intended to reinforce the assembly interface, and making disappear, at least partially, the radical oxide layer.


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