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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10586776 B1

PDFFull Text
Date of Patent:
Mar. 10, 2020

Filed:

Feb. 27, 2018

Semiconductor device and method of manufacturing the same

Applicant:

Ablic Inc., Chiba-shi, Chiba, JP;

Inventors:

Yoichi Mimuro, Chiba, JP;

Shinjiro Kato, Chiba, JP;

Tetsuo Shioura, Chiba, JP;

Assignee:

ABLIC INC., Chiba, JP;

Attorney:

Brinks Gilson & Lione

Primary Examiner:

Long Pham

Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/02 (2006.01); H01L 23/31 (2006.01); H01L 21/78 (2006.01); H01L 23/29 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/02266 (2013.01); H01L 21/31105 (2013.01); H01L 21/78 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 24/03 (2013.01); H01L 24/94 (2013.01); H01L 21/02057 (2013.01); H01L 21/02271 (2013.01); H01L 21/31116 (2013.01); H01L 2224/02215 (2013.01); H01L 2224/03011 (2013.01); H01L 2224/03019 (2013.01); H01L 2224/0382 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/03826 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/85205 (2013.01); H01L 2224/85375 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/05042 (2013.01);
Abstract

A semiconductor device includes a substrate; a laminate which is formed on one main surface side of the substrate, and includes an aluminum alloy wiring and an insulating film surrounding the aluminum alloy wiring; and a silicon nitride film covering the laminate, in which the silicon nitride film and the insulating film have an opening portion, through which the silicon nitride film and the insulating film, formed at a position overlapped with a bonding portion of the aluminum alloy wiring, and a deposition made of a residue caused by reverse sputtering, which contains silicon and nitrogen, adheres to a portion exposed from the opening portion of a surface of the aluminum alloy wiring, to form a film.

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