The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2020

Filed:

Jan. 29, 2018
Applicant:

Melexis Technologies NV, Tessenderlo, BE;

Inventor:
Assignee:

MELEXIS TECHNOLOGIES NV, Tessenderlo, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 29/45 (2006.01); H01L 29/06 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 29/84 (2006.01); H01L 23/485 (2006.01); G01D 21/00 (2006.01); H01L 29/8605 (2006.01); H01L 21/285 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); G01D 21/00 (2013.01); H01L 21/76864 (2013.01); H01L 23/485 (2013.01); H01L 23/5225 (2013.01); H01L 23/5226 (2013.01); H01L 23/53242 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 29/0684 (2013.01); H01L 29/456 (2013.01); H01L 29/84 (2013.01); H01L 29/8605 (2013.01); H01L 21/28518 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03848 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/05669 (2013.01); H01L 2924/10253 (2013.01);
Abstract

A sensor device for use in harsh media, comprising a silicon die comprises a lowly doped region, and a contact layer, contacting the silicon die. The contact layer comprises a refractory metal and an ohmic contact to the silicon die via a silicide of the refractory metal. A noble metal layer is provided over the contact layer such that the contact layer is completely covered by the noble metal layer. The noble metal layer comprises palladium, platinum or a metal alloy of palladium and/or platinum. The noble metal layer is patterned to form an interconnect structure and a contact connecting via the contact layer to the ohmic contact. The noble metal layer is adapted for providing a shield to prevent modulation of the lowly doped region by surface charges. The noble metal layer may advantageously protect the contact layer against harsh media in an external environment of the sensor device.


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