The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2020

Filed:

Jan. 02, 2019
Applicant:

Rohm Co., Ltd., Kyoto-shi, Kyoto, JP;

Inventor:

Yuto Nishiyama, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49555 (2013.01); H01L 21/4842 (2013.01); H01L 23/4952 (2013.01); H01L 23/49548 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 23/49582 (2013.01); H01L 24/49 (2013.01); H01L 24/45 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48257 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/49505 (2013.01);
Abstract

A semiconductor device includes a first lead with a first block, a second lead with a second block, and a sealing resin partially covering the first and second leads. The first block is exposed from the sealing resin and has a first covered surface covered with an electroconductive layer, and a pair of first exposed surfaces spaced apart from each other via a part of the first covered surface. The second block is exposed from the sealing resin and has a second covered surface covered with an electroconductive layer, and a pair of second exposed surfaces spaced apart from each other via a part of the first covered surface.


Find Patent Forward Citations

Nishiyama, Yuto. (2020). Semiconductor device, and method for manufacturing semiconductor device (U.S. Patent No. 10586755). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10586755

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…