The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2020
Filed:
Aug. 19, 2016
Applicant:
Toshiba Memory Corporation, Tokyo, JP;
Inventors:
Masako Kodera, Kanagawa-ken, JP;
Hiroshi Tomita, Kanagawa-ken, JP;
Takeshi Nishioka, Kanagawa-ken, JP;
Assignee:
Toshiba Memory Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/027 (2006.01); B24B 37/04 (2012.01); H01L 21/67 (2006.01); B82Y 40/00 (2011.01); G03F 7/09 (2006.01); B82Y 10/00 (2011.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02057 (2013.01); B24B 37/042 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); G03F 7/092 (2013.01); H01L 21/0209 (2013.01); H01L 21/0274 (2013.01); H01L 21/67051 (2013.01); G03F 7/0002 (2013.01);
Abstract
According to one embodiment, a method for fabricating a semiconductor device includes performing a back surface processing to remove at least one of a scratch and a foreign material formed on a back surface of a substrate to be processed, a front surface of the substrate being retained in a non-contact state, contacting the back surface of the substrate to a stage to be retained, and providing a pattern on the front surface of the substrate by using lithography.