The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2020

Filed:

Apr. 06, 2015
Applicant:

Tao Xu, Lisle, IL (US);

Inventor:

Tao Xu, Lisle, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 9/20 (2006.01); H01G 9/00 (2006.01); H01L 51/42 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01G 9/2031 (2013.01); H01G 9/0036 (2013.01); H01G 9/2009 (2013.01); H01L 51/0032 (2013.01); H01L 51/4226 (2013.01); Y02E 10/549 (2013.01);
Abstract

A photovoltaic device, comprises (1) a first conductive layer, (2) an optional blocking layer, on the first conductive layer, (3) a semiconductor layer, on the first conductive layer, (4) a light-harvesting material, on the semiconductor layer, (5) a hole transport material, on the light-harvesting material, and (6) a second conductive layer, on the hole transport material. The light-harvesting material comprises a perovskite absorber, and the second conductive layer comprises nickel. The semiconductor layer may comprise TiOnanowires. The light-harvesting material may comprise a perovskite absorber containing a pseudohalogen.


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