The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2020

Filed:

Aug. 06, 2018
Applicant:

Robert Bosch Gmbh, Stuttgart, DE;

Inventors:

Jochen Reinmuth, Reutlingen, DE;

Burkhard Kuhlmann, Reutlingen, DE;

Holger Hoefer, Juelich, DE;

Assignee:

Robert Bosch GmbH, Stuttgart, DE;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); B81C 1/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00888 (2013.01); B81C 1/0088 (2013.01); B81C 1/00182 (2013.01); B81C 1/00261 (2013.01); H01L 21/02002 (2013.01); B81C 2203/0118 (2013.01);
Abstract

A method for producing thin MEMS chips on SOI substrate including: providing an SOI substrate having a silicon layer on a front side and having an oxide intermediate layer, producing a layer structure on the front side of the SOI substrate and producing a MEMS structure from this layer structure, capping the MEMS structure and producing a cavity, and etching a back side of the SOI substrate down to the oxide intermediate layer. Also described is a micromechanical component having a substrate, a MEMS layer structure having a MEMS structure in a cavity and a cap element, the MEMS structure and its cavity being enclosed by the substrate underneath and the cap element above, the substrate being made of polycrystalline silicon.


Find Patent Forward Citations

Loading…