The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2020

Filed:

Dec. 01, 2017
Applicant:

Elbit Systems of America, Llc, Fort Worth, FL (US);

Inventors:

Arlynn W. Smith, Blue Ridge, VA (US);

Dan Chilcott, Buchanan, VA (US);

Assignee:

ELBIT SYSTEMS OF AMERICA, LLC, Fort Worth, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01); B81C 1/00 (2006.01); B81C 3/00 (2006.01); G02B 23/12 (2006.01); B32B 3/30 (2006.01); B32B 7/12 (2006.01); B32B 9/04 (2006.01); B32B 17/06 (2006.01); B32B 37/12 (2006.01); B32B 37/18 (2006.01); B81B 7/00 (2006.01); C03C 27/04 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00269 (2013.01); B32B 3/30 (2013.01); B32B 7/12 (2013.01); B32B 9/04 (2013.01); B32B 17/06 (2013.01); B32B 37/12 (2013.01); B32B 37/18 (2013.01); B81B 7/0041 (2013.01); B81C 3/001 (2013.01); C03C 27/046 (2013.01); G02B 23/12 (2013.01); B32B 2313/00 (2013.01); B32B 2315/08 (2013.01); B32B 2457/00 (2013.01); B81B 2201/047 (2013.01); B81B 2203/0315 (2013.01); B81C 2201/013 (2013.01); B81C 2201/019 (2013.01); B81C 2203/035 (2013.01); B81C 2203/037 (2013.01); B81C 2203/038 (2013.01);
Abstract

A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.


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