The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2020

Filed:

Jan. 24, 2019
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Peter Brick, Regensburg, DE;

Stefan Grötsch, Bad Abbach, DE;

Stephan Pawlik, Regensburg, DE;

Michael Wittmann, Alteglofsheim, DE;

Uli Hiller, Bad Abbach, DE;

Assignee:

OSRAM OLED GMBH, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/30 (2006.01); H01L 27/32 (2006.01); H01L 33/50 (2010.01); H05B 33/08 (2020.01); H01L 27/15 (2006.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H05B 33/0857 (2013.01); H01L 27/153 (2013.01); H01L 33/44 (2013.01); H01L 33/50 (2013.01);
Abstract

A radiation emitting device is disclosed. In an embodiment a radiation emitting device includes a pixelated optoelectronic semiconductor chip configured to emit a first radiation having a first peak wavelength, a conversion element or color control medium configured to convert at least a portion of the first radiation into a second radiation having a second peak wavelength and a color control element including a semiconductor diode configured to absorb a portion of the first and/or second radiation, wherein devise is configured to emit radiation of a first color temperature composed mainly of the first and second radiations when a reverse voltage is applied to the semiconductor diode and to emit radiation of a second color temperature composed mainly of the first and second radiations and a third radiation with a third peak wavelength generated by the absorbed first and/or second radiation in the semiconductor diode when a forward voltage is applied to the semiconductor diode.


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