The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Sep. 01, 2017
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
Nicholas Alexander Melosh, Menlo Park, CA (US);
Matt R. Angle, Stanford, CA (US);
Mina-elraheb S. Hanna, Stanford, CA (US);
Yifan Kong, Stanford, CA (US);
The Board of Trustee of the Leland Stanford Junior Universtiy, Stanford, CA (US);
Abstract
Methods for patterning highly sensitive materials, such as organic materials, organic semiconductors, biomolecular materials, and the like, with photolithographic resolution are disclosed. In some embodiments, a germanium mask () is formed on the surface of the sensitive material (), thereby protecting it from subsequent processes that employ harsh chemicals that would otherwise destroy the sensitive material (). A microlithography mask () is patterned on the germanium mask layer (), after which the germanium exposed by the microlithography mask () is removed by dissolving it in water. After transferring the pattern of the germanium mask () into the sensitive material (), the germanium and microlithography masks () are completely removed by immersing the substrate in water, which dissolves the remaining germanium and lifts off the microlithography mask material. As a result, the only chemical to which the sensitive material () is exposed during the patterning process is water, thereby mitigating or avoiding damage to the material ().