The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2020

Filed:

Aug. 23, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Il-mok Park, Seoul, KR;

Gwan-hyeob Koh, Seoul, KR;

Dae-hwan Kang, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1233 (2013.01); H01L 27/2427 (2013.01); H01L 27/2481 (2013.01); H01L 45/06 (2013.01); H01L 45/126 (2013.01); H01L 45/1253 (2013.01); H01L 45/141 (2013.01); H01L 45/144 (2013.01); H01L 45/1675 (2013.01); H01L 45/1683 (2013.01);
Abstract

A memory device including first conductive lines spaced apart from each other and extending in a first direction; second conductive lines spaced apart from each other and extending in a second direction that is different from the first direction; first memory cells having a structure that includes a selection device layer, a middle electrode layer, a variable resistance layer, and a top electrode layer; and insulating structures arranged alternately with the first memory cells in the second direction under the second conductive lines, wherein the first insulating structures have a top surface that is higher than a top surface of the first top electrode layer, and the second conductive lines have a structure that includes convex and concave portions, the convex portions being connected to the top surface of the top electrode layer and the concave portions accommodating the insulating structures between the convex portions.


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