The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2020

Filed:

Dec. 04, 2018
Applicants:

SK Hynix Inc., Gyeonggi-do, KR;

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Tae-Young Lee, Gyeonggi-do, KR;

Jae-Hyoung Lee, Gyeonggi-do, KR;

Sung-Woong Chung, Gyeonggi-do, KR;

Eiji Kitagawa, Tokyo, JP;

Assignees:

SK hynix Inc., Gyeonggi-do, KR;

Toshiba Memory Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01); G11C 11/16 (2006.01); H01L 43/06 (2006.01); H01L 43/08 (2006.01); H01L 43/14 (2006.01); H01L 43/04 (2006.01); G11C 11/18 (2006.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); H01L 43/04 (2013.01); H01L 43/06 (2013.01); H01L 43/065 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); H01L 43/14 (2013.01); G11C 11/18 (2013.01); G11C 11/22 (2013.01);
Abstract

An electronic device may include a semiconductor memory, and the semiconductor memory may include a first magnetic layer; a second magnetic layer; and a spacer layer interposed between the first magnetic layer and the second magnetic layer, wherein the spacer layer includes a first layer, a second layer and an intermediate layer interposed between the first layer and the second layer, and wherein each of the first layer and the second layer includes an oxide, or a nitride, or a combination of an oxide and a nitride, the intermediate layer includes a multilayer structure including [Ru/x]or [x/Ru], x includes a metal, an oxide, or a nitride, or a combination of a metal, an oxide and a nitride, and n represents an integer of 1 or greater.


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