The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Sep. 18, 2017
Applicant:
Industry-university Cooperation Foundation Hanyang University, Seoul, KR;
Inventors:
Jea Gun Park, Seongnam-si, KR;
Du Yeong Lee, Seoul, KR;
Song Hwa Hong, Seoul, KR;
Jin Young Choi, Seoul, KR;
Seung Eun Lee, Seoul, KR;
Junli Li, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); G11C 11/15 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/15 (2013.01); G11C 11/16 (2013.01); G11C 11/161 (2013.01); H01L 27/226 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract
The present invention relates to a memory device including a substrate and a lower electrode, buffer layer, seed layer, Magnetic Tunnel Junction (MTJ), capping layer, synthetic antiferromagnetic layer, and upper electrode formed on the substrate.