The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2020

Filed:

Sep. 11, 2017
Applicant:

Sulfurscience Technology Co., Ltd, Taipei, TW;

Inventors:

Zhen-Yu Juang, Taipei, TW;

Ho-Wei Wang, Taipei, TW;

Sung-Yen Wei, Zhubei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 9/04 (2006.01); H01L 37/02 (2006.01); B32B 5/16 (2006.01);
U.S. Cl.
CPC ...
H01L 37/025 (2013.01); B32B 5/16 (2013.01); B32B 9/04 (2013.01); B32B 9/048 (2013.01); B32B 2264/102 (2013.01); B32B 2264/108 (2013.01); B32B 2307/202 (2013.01);
Abstract

A thermoelectric material structure includes a substrate, at least one spacing layer, and at least one two-dimensional (2D) material layer. The substrate has a surface. The 2D material layer and the spacing layer are overlapped and disposed on the surface of the substrate. The thermal conductivity of the 2D material layer along the direction perpendicular to the surface of the substrate is less than 10 W/mK.


Find Patent Forward Citations

Juang, Zhen-Yu. (2020). Thermoelectric material structure (U.S. Patent No. 10580957). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10580957

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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