The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2020

Filed:

Dec. 20, 2018
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Chun-Yu Lin, Hsinchu, TW;

Yung-Fu Chang, Hsinchu, TW;

Rong-Ren Lee, Hsinchu, TW;

Kuo-Feng Huang, Hsinchu, TW;

Cheng-Long Yeh, Hsinchu, TW;

Yi-Ching Lee, Hsinchu, TW;

Ming-Siang Huang, Hsinchu, TW;

Ming-Tzung Liou, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 33/42 (2010.01); H01L 33/40 (2010.01); H01L 33/22 (2010.01); H01L 33/06 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/387 (2013.01); H01L 33/06 (2013.01); H01L 33/22 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/20 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.


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