The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Jun. 02, 2017
Applicant:
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Inventors:
Ivan-Christophe Robin, Grenoble, FR;
Matthew Charles, Grenoble, FR;
Yohan Desieres, Lans en Vercors, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/46 (2010.01); H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/20 (2010.01); H01L 33/22 (2010.01); H01L 33/18 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); H01L 33/0079 (2013.01); H01L 33/16 (2013.01); H01L 33/18 (2013.01); H01L 33/20 (2013.01); H01L 33/22 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/46 (2013.01); H01L 33/0075 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0083 (2013.01);
Abstract
A method of manufacturing a gallium nitride light-emitting diode, including the successive steps of: a) forming a planar active gallium nitride light-emitting diode stack including first and second doped gallium nitride layers of opposite conductivity types and, between the first and second gallium nitride layers, an emissive layer with one or a plurality of quantum wells; and b) growing nanowires on the surface of the first gallium nitride layer opposite to the emissive layer.